MIGLIORATO Piero | Department of Engineering, University of Cambridge

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概要

• 同名の論文著者
• Department of Engineering, University of Cambridgeの論文著者

関連著者

• 木村 睦

  龍谷大学電子情報学科

• 井上 聡

  セイコーエプソン株式会社フロンティアデバイス研究所

• 下田 達也

  Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology

• Lui BaSil

  エプソンケンブリッジ研究所

• Lui B

  Epson Cambridge Lab. Cambridge Gbr

• INOUE Satoshi

  Base Technology Research Center, Seiko Epson Corp.

• KIMURA Mutsumi

  Base Technology Research Center, Seiko Epson Corporation

• NOZAWA Ryoichi

  Base Technology Research Center, Seiko Epson Corporation

• LUI Basil

  Epson Cambrodge Laboratory

• TAM Simon

  Epson Cambridge Laboratory

• MIGLIORATO Piero

  Department of Engineering, University of Cambridge

• Nozawa Ryoichi

  Base Technology Research Center Seiko Epson Corporation

• Migliorato Piero

  Univ. Cambridge Cambridge Gbr

• Migliorato Piero

  Department Of Engineering University Of Cambridge

• Inoue S

  Seiko Epson Corporation

• 木村 睦

  Department Of Electronics And Informatics Ryukoku University

• SHIMODA Tatsuya

  Seiko Epson Corporation

• TAM Simon

  Cambridge Research Laboratory of Epson

• 野澤 陵一

  セイコーエプソン株式会社OLED技術開発部

• Migliorato Piero

  ケンブリッジ大学工学部

• Tam S

  Cambridge Research Laboratory Of Epson

• SHIMODA Tatsuya

  Base Technology Research Center, Seiko Epson Corp.

• SHIMODA Tatsuya[

  Base Technology Research Center, Seiko Epson Corporation

• Kimura Mutsumi

  Ryukoku University:innovative Materials And Processing Research Center

• Shimoda Tatsuya

  Seiko Epson Corp. Nagano Jpn

• Shimoda Tatsuya

  Base Technology Research Center Seiko Epson Corporation

• Shimoda Tatsuya[

  Base Technology Research Center Seiko Epson Corporation

• 木村 睦

  龍谷大学 理工学部 電子情報学科

• Kimura Mutsumi

  Base Technology Research Center Seiko Epson Corporation

• 下田 達也

  Seiko Epson Corporation

• Lui Basil

  Epson Cambridge Laboratory, 8c King's Parade, Cambridge CB2 1SJ, United Kingdom

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著作論文

• Extraction of Trap State at the Oxide-Silicon Interface and Grain Biundary in Polycrystallune Silicon Thin-Film Transistors
• Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors : Semiconductors

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