NOZAWA Ryoichi | Base Technology Research Center, Seiko Epson Corporation
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概要
関連著者
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木村 睦
龍谷大学電子情報学科
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井上 聡
セイコーエプソン株式会社フロンティアデバイス研究所
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下田 達也
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology
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INOUE Satoshi
Base Technology Research Center, Seiko Epson Corp.
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KIMURA Mutsumi
Base Technology Research Center, Seiko Epson Corporation
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NOZAWA Ryoichi
Base Technology Research Center, Seiko Epson Corporation
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Nozawa Ryoichi
Base Technology Research Center Seiko Epson Corporation
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SHIMODA Tatsuya
Seiko Epson Corporation
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野澤 陵一
セイコーエプソン株式会社OLED技術開発部
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Lui BaSil
エプソンケンブリッジ研究所
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Lui B
Epson Cambridge Lab. Cambridge Gbr
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SHIMODA Tatsuya
Base Technology Research Center, Seiko Epson Corp.
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LUI Basil
Epson Cambrodge Laboratory
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TAM Simon
Epson Cambridge Laboratory
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MIGLIORATO Piero
Department of Engineering, University of Cambridge
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Kimura Mutsumi
Ryukoku University:innovative Materials And Processing Research Center
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Migliorato Piero
Univ. Cambridge Cambridge Gbr
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Migliorato Piero
Department Of Engineering University Of Cambridge
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Shimoda Tatsuya
Base Technology Research Center Seiko Epson Corporation
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Shimoda Tatsuya[
Base Technology Research Center Seiko Epson Corporation
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Inoue S
Seiko Epson Corporation
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Kimura Mutsumi
Base Technology Research Center Seiko Epson Corporation
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下田 達也
Seiko Epson Corporation
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木村 睦
Department Of Electronics And Informatics Ryukoku University
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KIMURA Mutsumi
Ryukoku University
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TAM Simon
Cambridge Research Laboratory of Epson
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Migliorato Piero
ケンブリッジ大学工学部
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Tam S
Cambridge Research Laboratory Of Epson
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SHIMODA Tatsuya[
Base Technology Research Center, Seiko Epson Corporation
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Shimoda Tatsuya
Seiko Epson Corp. Nagano Jpn
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Kimura M
Department Of Electrical Engineering Kure National College Of Technology
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木村 睦
龍谷大学 理工学部 電子情報学科
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Kimura Mutsumi
Ryukoku Univ. Otsu‐shi Jpn
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Lui Basil
Epson Cambridge Laboratory, 8c King's Parade, Cambridge CB2 1SJ, United Kingdom
著作論文
- Extraction of Trap State at the Oxide-Silicon Interface and Grain Biundary in Polycrystallune Silicon Thin-Film Transistors
- Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors : Semiconductors
- Current Density Enhancement at Active Layer Edges in Polycrystalline Silicon Thin-Film Transistors : Semiconductors