Schottky-Barrier Properties of Nearly-Ideal (n≃1) Al Contacts on MBE- and Heat Cleaned-GaAs Surfaces
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概要
- 論文の詳細を見る
Aluminum films were deposited in ultra-high vacuum onto heat-cleaned-surfaces as well as oxygen-free MBE surfaces of (100) GaAs to form Schottky barriers with and without intervening oxide layers. The measured ideality factor n was close to unity (n≃1.02∿1.10) irrespective of the oxide thickness t_<ox>, indicating the transport being dominated by thermionic emission processes. In contrast, the barrier height decreased systematically from 0.89 eV to 0.67 eV, as t_<ox> is reduced, suggesting the presence of negatively charged centers (≃10^<12>/cm^2) at GaAs/oxide interfaces.
- 社団法人応用物理学会の論文
- 1981-02-05
著者
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Sun Dian
Institute Of Industrial Science University Of Tokyo
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Tanaka Akihiro
Institute For Drug Discovery Research Yamanouchi Pharmaceutical Co. Ltd.
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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Ohno Hideo
Institute Of Industrial Science University Of Tokyo
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SEKIGUCHI Yoshinobu
Institute of Industrial Science, University of Tokyo
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TANIGUCHI Mitsuhiro
Institute of Industrial Science, University of Tokyo
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Taniguchi Mitsuhiro
Institute Of Industrial Science University Of Tokyo
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Sekiguchi Yoshinobu
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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Tanaka Akihiro
Computational Materials Science Center National Institute For Materials Sciences
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Tanaka Akihiro
Institute Of Industrial Science University Of Tokyo
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