A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET)
スポンサーリンク
概要
- 論文の詳細を見る
We have proposed and successfully fabricated a new type of field-effect transistor (FET) with an M-I-S-S structure, which consists of a metal gate, an Al_2O_3 insulator and a semiconductor-semiconductor (N-AlGaAs/GaAs) heterojunction, grown by molecular beam epitaxy. This device exhibited the following adventages. High effective mobility of electrons (μ_<eff> being 27,000 cm^2/V・s at 77 K) and, the capability of sustaining a high gate voltage of up to 2 V in the forward direction. These features permit the use of MISSFETs in a variety of logic circuits with a larger logic swing and higher speed than those of MESFETs.
- 社団法人応用物理学会の論文
- 1982-02-05
著者
-
Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
-
Ohno Hideo
Institute Of Industrial Science University Of Tokyo
-
Hotta Takashi
Institute Of Industrial Science University Of Tokyo
-
Hotta Takashi
Institute For Solid State Physics University Of Tokyo
-
Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
関連論文
- Fractional Quantum Hall Effect at ν=1/7
- Reduced Phonon Scattering in an Asymmetric Triple Barrier Resonant-Tunneling Diode at High Magnetic Fields(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- High-Resolution Transmission Electron Microscopy of AlAs/GaAs Imterfacial Structure in the Projection
- Localization and Quantum Hall Effect in Two-Dimensional Systems Under Strong Magnetic Fields(Transport and Fermiology)
- Phototransistors Using Point Contact Structures
- Phototransistors Using Point Contact Structures
- Magnetophonon Resonance in a Two-Dimensional Electron System in the GaAs-Al_xAs Heterojunction Interface
- Spontaneous Emission Characteristics of Quantum Well Lasers in Strong Magnetic Fields : An Approach to Quantum-Well-Box Light Source
- Control of Current Hysteresis Effects in a GaAs/n-AlGaAs Quantum Trap Field Effect Transistor with Embedded InAs Quantum Dots
- Kelvin Probe Force Microscopy on InAs Thin Films on (110) GaAs Substrates
- Angular Dependent Magnetoresistance Oscillation in GaAs/Al_xGa_As Superalttice
- Splitting of Photoluminescence Spectra and Negative Differential Resistance Caused by the Electric Field Induced Resonant Coupling of Quantized Levels in GaAs-AlGaAs Multi-Quantum Well Structures
- MBE Growth and Properties of AlGaAs/GaAs/AlGaAs Selectively-Doped Double-Heterojunction Structures with Very High Conductivity
- Anomalous Magnetoresistance in Perpendicular Magnetic Fields Observed in High Mobility GaAs/Al_xGa_As Interfaces
- Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_As Heterostructures
- Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_As Heterojunction Interfaces
- Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-Al_xGa_As (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
- Structural Evaluation of GaAs/AlGaAs Heterointerfaces by Atomic-Resolution Electron Micrograph with Clear Contrast
- Carrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC)
- Formation of Ultra-low Density (${\leq}10^{4}$ cm-2) Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method
- Schottky-Barrier Properties of Nearly-Ideal (n≃1) Al Contacts on MBE- and Heat Cleaned-GaAs Surfaces
- Effects of Dephasing and Dissipation on Nonequilibrium Quantum Noise
- Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier Widths
- Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling Diode
- Quasi-Particle Density of States of Two-Dimensional Hubbard Model
- Hopping-Integral Expansion from the Limit of Zero Bandwidth in the Infinite-Dimensional Hubbard-Holstein Model
- A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET)
- An Integrated Photodetector Using the Partially Metal-Clad-Dielectric-Slab Waveguide Structure : B-7: SEMICONDUCTOR LASERS (II)
- MBE Growth and Optical Properties of Novel Corrugated-Interface Quantum Wells : Surfaces, Interfaces and Films
- Tunneling Spectroscopy of Resonant Transmission Coefficient in Double Barrier Structure
- Properties of Deep Levels in ZnO Varistors and Their Effect on Current-Response Characteristics
- Velocity-Modulation Transistor (VMT) : A New Field-Effect Transistor Concept
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
- Second Activation Energy in the Fractional Quantum Hall Effect
- Direct Observation of Electron Jet from a Point Contact
- Self-Assembled Growth of GaSb Type II Quantum Ring Structures
- A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)
- Reduced Phonon Scattering in an Asymmetric Triple Barrier Resonant-Tunneling Diode at High Magnetic Fields(Condensed matter: electronic structure and electrical, magnetic, and optical properties)