Velocity-Modulation Transistor (VMT) : A New Field-Effect Transistor Concept
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概要
- 論文の詳細を見る
Field-effect transistors of a completely new category are proposed and analysed, in which the conductivity modulation ?G by the gate voltage V_g is brought forth mainly through the V_g-dependence of electron mobility. Since the sheet concentration of electrons in such FETs need not be modulated, the switching speed of the device is expected to be free from the transit time limitation, reaching the range of subpicosecond. As a specific example, an FET with a dual-channel configuration is discussed.
- 社団法人応用物理学会の論文
- 1982-06-20
著者
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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