Formation of Ultra-low Density (${\leq}10^{4}$ cm-2) Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method

概要

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We have studied a self-assembled growth technique to form ultra-low density InAs quantum dots on GaAs by molecular beam epitaxy. After growing a GaAs layer under a particular condition, we have deposited an InAs layer of far less than the critical thickness and performed an annealing process. By optimizing these process steps, the density of dots is successfully controlled over a wide range from $10^{4}$ to $10^{8}$ cm-2, at which the average interdot distance gets as long as 100 μm. Photoluminescence spectra of low dot density samples have shown discrete single-dot features even under a macroscopic optical excitation. These dots are found to be formed preferentially on GaAs mounds especially when the dot density is around $2.5\times 10^{5}$ cm-2.
Japan Society of Applied Physicsの論文
2008-06-25