Phonon-Limited Electron Mobility in Si(100) Inversion Layer at Low Temparatures
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概要
- 論文の詳細を見る
Calculation of electron mobility due to surfon scattering at temperatures 1<7'<50 K and electron surface densities 10"<.N,<5 XIO" cm-' indicates, whenc6mparedJwith measurements by Kawaguchi and Kawaji, that the surfon scatter-5'=ing alone cannot explain the temperature dependent part which they extracted.
- 社団法人日本物理学会の論文
- 1981-01-15
著者
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Shinba Yutaka
Department Of Instrumentation Engineering Keio University
-
Nakamura Koichi
Department Of Clinical Pharmacology And Therapeutics Oita University Faculty Of Medicine
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