Proximity Effect in Accumulation Layer on Si-Superconducting Transistor

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概要

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• Taking quasi-two dimensional nature of the carrier distribution, the critical super-conduting current in the accumulation layer formed on Si-superconducting transistoris calculated in the dirty limit as a function of surface carrier concentration. Thecaluculated result reproduces the tendency of the gate voltage dependence of thecritical current observed by Nishino et al.[superconducting proximity effect, dirty limit, field effect transistor, accumula- ll lion layer, critical current, superconducting transistor, theoryl

• 社団法人日本物理学会の論文
• 1991-02-15

著者

• Shinba Y

  Department Of Physics Keio University

• Shinba Yutaka

  Department Of Instrumentation Engineering Keio University

関連論文

• Hot Electron Effect in Si(111)Inversion Layer at Low Temperatures
• Hot Electrons in Si(100)Inversion Layer at Low Lattice Temperatures
• Phonon-Limited Electron Mobility in Si(100) Inversion Layer at Low Temparatures
• Proximity Effect in Accumulation Layer on Si-Superconducting Transistor

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