Origin of the E_v+0.5l eV Level in GaAs
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概要
- 論文の詳細を見る
From an electron beam irradiation and annealing experiment on LPE GaAs, we have shown that the E_v+0.51 eV level appeared in Fe-doped wafers only after irradiation and annealing at 200 C. Thus it is pointed out that the Ga-vacancies are necessary for Fe to form such a deep state in GaAs.
- 社団法人応用物理学会の論文
- 1981-08-05
著者
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IKOMA Toshiaki
Institute of Industrial Science, University of Tokyo
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TAKIKAWA Masahiko
Institute of Industrial Science, University of Tokyo
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Ikoma Toshiaki
Institute Of Industrial Science The University Of Tokyo
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Takikawa Masahiko
Institute Of Industrial Science University Of Tokyo
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