Photo-Excited DLTS: Measurement of Minority Carrier Traps
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概要
- 論文の詳細を見る
Novel methods which take into account the temperature dependence of the amplitude of capacitance transient are presented to determine minority carrier trap parameters from Photo-Excited DLTS spectra. These methods were applied to the Fe-level in a GaAs p^+n junction and the validity was demonstrated by comparing the results with the conventional junction DLTS.
- 社団法人応用物理学会の論文
- 1980-07-05
著者
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IKOMA Toshiaki
Institute of Industrial Science, University of Tokyo
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TAKIKAWA Masahiko
Institute of Industrial Science, University of Tokyo
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Ikoma Toshiaki
Institute Of Industrial Science The University Of Tokyo
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Takikawa Masahiko
Institute Of Industrial Science University Of Tokyo
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