Application and Theory of Electron Beam Acoustic Microscope (EAM) : Ultrasonic Imaging and Microscopy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-09-20
著者
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IKOMA Toshiaki
Institute of Industrial Science, University of Tokyo
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MURAYAMA Masahioko
Tokyo Shibaura Institute of Technology
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MORIZUKA Kohei
Institute of Industrial Science, University of Tokyo
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Ikoma Toshiaki
Institute Of Industrial Science The University Of Tokyo
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Morizuka Kohei
Institute Of Industrial Science University Of Tokyo
関連論文
- Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor ( Quantum Dot Structures)
- Evidence for Creation of Gallium Antisite Defect in Surface Region of Bleat-Treated GaAs
- 1.54 μm Electroluminescence by Electron Impact Excitation of Er Atoms Doped in InP
- Anomalous Gate Current Oscillation due to Hot Carrier Effect in MOS Diodes
- Angular Dependent Magnetoresistance Oscillation in GaAs/Al_xGa_As Superalttice
- Coherent Transport through Electron Wave Directional Coupling Structures
- Computer Aided Detection of Slow Motion of Defects in GaP Light Emitting Diodes
- Annealing Effect on Carrier Density Profile in GaAs Covered with Anodic Oxide
- Application and Theory of Electron Beam Acoustic Microscope (EAM) : Ultrasonic Imaging and Microscopy
- How to Determine Parameters of Deep Levels by DLTS Single Temperature Scanning
- Electron Transport Properties of Ga_xIn_Sb Calculated by the Monte Carlo Method
- Thermally Stimulated Capacitance and Thermally Stimulated Current in a p-n Junction with Generation-Recombination Centers
- Small Signal Equivalent Circuit for an MIS Tunnel Diode
- Trap Centers in MNOS Memory Devices Measured by Thermally Stimulated Currents
- Improved Efficiency of Si MOS Solar Cell due to Surface States and Oxide Charges : I-2: SILICON SOLAR CELLS (II)
- Origin of the E_v+0.5l eV Level in GaAs
- Photo-Excited DLTS: Measurement of Minority Carrier Traps
- Collimation of Two-Dimensional Ballistic Electrons Using Equivalent Snell's Law
- Properties of Deep Levels in ZnO Varistors and Their Effect on Current-Response Characteristics
- Effects of a Ramped AC Voltage on the Characteristics of WO_3 Electrochromic Cells