Quantum Noise of Semiconductor Light-Emitting Devices at a Low-Injection Level
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概要
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We study the photon statistics of seaaaiconductor light-emitting devices at a low-injection level,using quantum Langevin eqtrations which take account of nonradiative processes and carriernurnber dependence of lifetimes. Assuming the noise correlations which are consistent withthe fluctuation-dissipation theorenaa, we derive new formttlae for the photon Fano factor, whichrepresents the photon statistics as a function of the pL1l11p (injection) statistics. The formulaeare applicable to the general cases when the quantum efficiency r7 difT'ers from the differentialqtranturn efficiency 77a and when eznission efficiency and/or detection efficiency of' photons aredifferent among different photon modes. The fornatrlae agree with recent experimental restrlts,which cannot be explained by the previous theories. It is also shown that a Poissonian PLIIIIP canproduce either sub-Poissonian light (if 77a< r7 at the rtrnning point) or super-Poissonian light (if77a >77),
- 社団法人日本物理学会の論文
- 1997-01-15
著者
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Fujisaki Hiroshi
Institute For Molecular Science
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Fujisaki Hiroshi
Institute Of Phyusics University Of Tokyo
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Shimuzu Akira
Institute Of Phyusics University Of Tokyo
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Shimizu Akira
Institute Of Physics The University Of Tokyo
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