Niimi Tatsuya | Department Of Applied Physics Tokai University
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概要
関連著者
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NIIMI Tatsuya
Department of Electrical Engineering, Faculty of Engineering, Keio University
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Niimi Tatsuya
Department Of Applied Physics Tokai University
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Matsumoto Satoru
Department of Cardiology, Toyonaka Municipal Hospital
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Matsumoto Satoru
Department Of Electrical Engineering Faculty Of Engineering Keio University
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Niimi Tatsuya
Department Of Electrical Engineering Faculty Of Engineering Keio University
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Ishikawa Y
Dowa Mining Co. Ltd. Tokyo
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NAKAMURA Hiroaki
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Arai Eisuke
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Matsumoto S
Keio Univ. Yokohama Jpn
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NIIMI Tetsuji
Department of Materials Science, Aichi University of Education
著作論文
- The Distribution of the Excess Vacancies in the Bulk at the Diffusion of Phosphorus into Silicon
- Phosphorus Diffusion in Silicon Free from the Surface Effect under Extrinie Conditions
- The Confirmation of the Surface Effect upon Phosphorus Diffusion into Silicon
- Determination of Diffusion Coefficient of Phosphorus in Silicon by Boltzmann-Matano's Method
- Electrical Properties of CdCr_2Se_4. : I. p-Type Ag-Doped Single Crystals
- Anitimony Diffusion into Sillicon by the Doped Oxide Method
- Phosphorus Diffusion into Silicon under the Condition of Controlled Surface Concentration
- Electrical Conductivity of p-Type CdCr_2Se_4 Single Crystals
- Electrical Properties of CdCr_2Se_4. : II. n-Type In-Doped Single Crystals
- Electrical Properties of Amorphous Semiconductor Ge_xS_