Internal Friction Due to Localized Relaxation around Y-ions in Single Crystal Yttria-Stabilized Zirconia : Structure and Mechanical and Thermal Properties of Condensed Matter

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-09-15

著者

• Nobugai Kohji

  The Institute of Scientific and Industrial Research, Osaka University

• MIYASATO Tatsuro

  Kyushu Institute of Technology

• Kirimoto K

  Faculty Of Computer Science And Systems Engineering Kyushu Institute Of Technology

• OHTA Michihiro

  Faculty of Computer Science and Systems Engineering, Kyushu Institute of Technology

• KIRIMOTO Kenta

  Faculty of Computer Science and Systems Engineering, Kyushu Institute of Technology

• WIGMORE J.Keith

  Department of Physics, Lancaster University

• Ohta Michihiro

  Faculty Of Computer Science And Systems Engineering Kyushu Institute Of Technology

• Wigmore J.keith

  Department Of Physics Lancaster University

• Nobugai Kohji

  The Institute Of Scientific And Industrial Research Osaka University

• Miyasato T

  Kyushu Institute Of Technology

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• Influence of Oxygen on Formation of Hollow Voids at SiC/Si Interface : Semiconductors
• Fabrication of Nanoscale Cubic SiC Particle Film
• Compositional Changes of SiC/Si Structure during Vacuum Annealing
• Activation Energy of Nanoscale 3C-SiC Island Growth on Si Substrate
• Influence of SiC Cover Layer of Si Substrate on Properties of Cubic SiC Films Prepared by Hydrogen Plasma Sputtering
• Infrared Absorption Properties of Nanocrystalline Cubic SiC Films
• Behaviors of Carbon at Initial Stages of SiC Film Grown on Thermally Oxidized Si Substrate
• Observation of the Formation Processes of Hollow Voids at the Interface between SiC Film and Si Substrate
• Low-Temperature Growth of Oriented Silicon Carbide on Silicon by Reactive Hydrogen Plasma Sputtering Technique
• Study of Hydrogen Ion Bombardment Effect on the Growth of Si:H Films Prepared by Hydrogen Plasma Sputtering of Silicon
• Temperature-Dependent Reaction of rf Hydrogen Plasma with Silicon
• Internal Friction Due to Localized Relaxation around Y-ions in Single Crystal Yttria-Stabilized Zirconia : Structure and Mechanical and Thermal Properties of Condensed Matter
• Ultrasonic Attenuation Due to Localized Relaxation in Cubic Yttria-Stabilized Zirconia
• Room-Temperature Synthesis of ZnS:Mn Films by H_2 Plasma Chemical Sputtering
• Growth Mechanism of ZnS:Mn Films Obtained by Hydrogen Plasma Sputtering and Its Application to a Thin-Film Electroluminescent Device
• Stress Release Behaviors of Amorphous SiC/Si Structure during Annealing : Semiconductors

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