Conversion of Si(100) to Si_<1-x-y>Ge_xC_y Alloy by Hydrogen Plasma Containing Ge and C Species

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-03-15

著者

• Sun Yong

  Department Of Burns & Plastic Surgery Beijing Ji-shui-tan Hospital

• Sun Y

  Department Of Applied Physics Hebei University Of Technology

• ENOKIDA Toyotsugu

  Quality Evaluation and Chemical Analysis Department, Fukuryou Semicon Engineering Corporation

• HAGINO Hiroyasu

  Quality Evaluation and Chemical Analysis Department, Fukuryou Semicon Engineering Corporation

• MIYASATO Tatsuro

  Kyushu Institute of Technology

• Sun Yong

  Department Of Computer Science The Queen's University Of Belfast

• Hagino H

  Technology Research Institute Of Osaka Prefecture

• Sun Y

  Toshiba Res. Europe Ltd. Bristol Gbr

• Enokida T

  Quality Evaluation And Chemical Analysis Department Fukuryo Semicon Engineering Corporation

• Miyasato T

  Kyushu Institute Of Technology

• Sun Yong

  Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology

• Hagino Hiroyasu

  Quality Evaluation and Chemical Analysis Department, Fukuryo Semicon Engineering Corporation

関連論文

• Phase-Shifting X-Ray Shearing Interferometer
• Formation Mechanism for High-Surface-Area Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition
• The Extensive Burns Treatment in China
• プロセス・モデリングと高信頼性システム
• プロセス・モデリングと高信頼性システム
• Critical Voltage of π-Cell Liquid Crystal Displays
• Void free at Interface of the SiC Film and Si Substrate
• Effect of Collection Distance on the Lattice Structure of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
• High Anatase-Rutile Transformation Temperature of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
• Novel Mode of Liquid Crystal Display with Narrow Viewing Angle(Structure and Mechanical and Thermal Properties of Condensed Matter)
• Conversion of Si(100) to Si_Ge_xC_y Alloy by Hydrogen Plasma Containing Ge and C Species
• Growth of 3C-SiC on Si Substrate with Ge_C_ Buffer Layer : Semiconductors
• Influence of Oxygen on Formation of Hollow Voids at SiC/Si Interface : Semiconductors
• Fabrication of Nanoscale Cubic SiC Particle Film
• Compositional Changes of SiC/Si Structure during Vacuum Annealing
• Activation Energy of Nanoscale 3C-SiC Island Growth on Si Substrate
• Influence of SiC Cover Layer of Si Substrate on Properties of Cubic SiC Films Prepared by Hydrogen Plasma Sputtering
• Infrared Absorption Properties of Nanocrystalline Cubic SiC Films
• Behaviors of Carbon at Initial Stages of SiC Film Grown on Thermally Oxidized Si Substrate
• Observation of the Formation Processes of Hollow Voids at the Interface between SiC Film and Si Substrate
• Low-Temperature Growth of Oriented Silicon Carbide on Silicon by Reactive Hydrogen Plasma Sputtering Technique
• Study of Hydrogen Ion Bombardment Effect on the Growth of Si:H Films Prepared by Hydrogen Plasma Sputtering of Silicon
• Study of the Growth Mechanism of Nanocrystalline Si:H Films Prepared by Reactive Hydrogen Plasma Sputtering of Silicon
• Temperature-Dependent Reaction of rf Hydrogen Plasma with Silicon
• Study of Sputtering Mechanism of Silicon with Hydrogen Plasma Controlled by Magnetic Field
• Internal Friction Due to Localized Relaxation around Y-ions in Single Crystal Yttria-Stabilized Zirconia : Structure and Mechanical and Thermal Properties of Condensed Matter
• Ultrasonic Attenuation Due to Localized Relaxation in Cubic Yttria-Stabilized Zirconia
• The Experimental Study on the Effects of Pause Breathing Patterns on Heart Rate Variability(International Conference on Mind Body Science : Physical and Physiological Approach joint with The Eighteenth Symposium on Life Information Science)
• Thickness and Stress Polarity Effects on the Reliability of the Low Thermal Budget Polyoixdes : Semiconductors
• Induction of Differentiation by Panaxydol in Human Hepatocarcinoma SMMC-7721 Cells via cAMP and MAP Kinase Dependent Mechanism
• Electroluminescence Properties of Three-Layered Organic Light-Emitting Diodes with a Layer of Tetraphenylchlorin or Tetraphenylporphine
• Room-Temperature Synthesis of ZnS:Mn Films by H_2 Plasma Chemical Sputtering
• Growth Temperature Dependence of μc-Si:H Films Sputtered with Hydrogen Gas
• Comparison of the Characteristics of Polyoxides Grown by Thermal, Rapid Thermal Oxidation, and Tetraethylorthosilicate Deposition Methods
• Properties of Charge Carrier Transport in Au/Phenyl C61 Butyric Acid Methyl Ester/Au Structure
• Efficient Wavelet-Based Image Retrieval Using Coarse Segmentation and Fine Region Feature Extraction(Image Processing and Video Processing)
• Improvement of Annealing Properties of SiC/Si Structure
• Characterization of Stress in Porous Silicon Films Prepared by Reactive Hydrogen Plasma Sputtering Technique
• Growth Mechanism of ZnS:Mn Films Obtained by Hydrogen Plasma Sputtering and Its Application to a Thin-Film Electroluminescent Device
• Stress Release Behaviors of Amorphous SiC/Si Structure during Annealing : Semiconductors
• Loss Behaviors of Si Substrate during Growth of the SiC Films Prepared by Hydrogen Plasma Sputtering
• Plasma Etch Void Formed at the SiC Film/Si Substrate Interface
• The Effect of the Growth Temperature on Polyoxide by Rapid Thermal Processing
• An Abnormal Temperature Dependence of Conductivity in Fullerene Solids
• Epitaxial Growth of Cubic SiC Film on Si Crystal with Curved Surface

もっと見る 閉じる

スポンサーリンク