Temperature-Dependent Reaction of rf Hydrogen Plasma with Silicon
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-08-01
著者
-
Sun Yong
Department Of Burns & Plastic Surgery Beijing Ji-shui-tan Hospital
-
NISHITANI Ryusuke
Department of Electrical and Electronics Engineering, University of the Ryukyus
-
MIYASATO Tatsuro
Department of Computer Science and Electronics, Kyushu Institute of Technology
-
Sun Y
Department Of Applied Physics Hebei University Of Technology
-
Nishitani R
Kyushu Inst. Technol. Fukuoka Jpn
-
Nishitani Ryusuke
Department Of Computer Science And Electronics Kyushu Institute Of Technology
-
Sun Yong
Department Of Computer Science The Queen's University Of Belfast
-
Sun Y
Toshiba Res. Europe Ltd. Bristol Gbr
-
Miyasato T
Kyushu Institute Of Technology
-
Miyasato Tatsuro
Department Of Computer Science And Electronics Kyushu Institute Of Technology
-
Sun Yong
Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology
-
Miyasato Tatsuro
Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology
関連論文
- Formation Mechanism for High-Surface-Area Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition
- The Extensive Burns Treatment in China
- Scanning Tunneling Microscope (STM)-Excited Molecular Fluorescence from Porphyrin Thin Films
- プロセス・モデリングと高信頼性システム
- プロセス・モデリングと高信頼性システム
- An Interpretation of the Correlation Between the Intensity of Scanning Tunneling Microscopy (STM) Induced Light Emission and the Topographic Height for the Metal Particles
- Variation of Photoluminescence Properties of Stain-Etched Si with Crystallinity of Starting Polycrystalline Si Films
- Effects of Light Exposure during Anodization on Photoluminescence of Porous Si
- Vibrational Modes of C_ Fullerene on Si(111)7×7 Surface : Estimation of Charge Transfer from Silicon Dangling Bonds to C_ Molecules
- Critical Voltage of π-Cell Liquid Crystal Displays
- Void free at Interface of the SiC Film and Si Substrate
- Effect of Collection Distance on the Lattice Structure of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
- High Anatase-Rutile Transformation Temperature of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
- Novel Mode of Liquid Crystal Display with Narrow Viewing Angle(Structure and Mechanical and Thermal Properties of Condensed Matter)
- Conversion of Si(100) to Si_Ge_xC_y Alloy by Hydrogen Plasma Containing Ge and C Species
- Growth of 3C-SiC on Si Substrate with Ge_C_ Buffer Layer : Semiconductors
- Influence of Oxygen on Formation of Hollow Voids at SiC/Si Interface : Semiconductors
- Fabrication of Nanoscale Cubic SiC Particle Film
- Compositional Changes of SiC/Si Structure during Vacuum Annealing
- Activation Energy of Nanoscale 3C-SiC Island Growth on Si Substrate
- Influence of SiC Cover Layer of Si Substrate on Properties of Cubic SiC Films Prepared by Hydrogen Plasma Sputtering
- Infrared Absorption Properties of Nanocrystalline Cubic SiC Films
- Behaviors of Carbon at Initial Stages of SiC Film Grown on Thermally Oxidized Si Substrate
- Observation of the Formation Processes of Hollow Voids at the Interface between SiC Film and Si Substrate
- Low-Temperature Growth of Oriented Silicon Carbide on Silicon by Reactive Hydrogen Plasma Sputtering Technique
- Study of Hydrogen Ion Bombardment Effect on the Growth of Si:H Films Prepared by Hydrogen Plasma Sputtering of Silicon
- Study of the Growth Mechanism of Nanocrystalline Si:H Films Prepared by Reactive Hydrogen Plasma Sputtering of Silicon
- Temperature-Dependent Reaction of rf Hydrogen Plasma with Silicon
- Study of Sputtering Mechanism of Silicon with Hydrogen Plasma Controlled by Magnetic Field
- Site-Dependent ^O Substitution in YBa_2Cu_3O_7 Studied by Raman Scattering Measurements
- Systematic Raman Scattering Study on Substitutional Effects in Solid Solution Systems of Ln_Ba_Cu_3O_y (Ln=Eu, Sm and La)
- Raman Scattering Study of the Effect of Nd Substitution into Ba Sites on the Phonon Spectrum of Nd_Ba_Cu_3O_y (x=0-0.4, y=〜7)
- In-Situ Raman Scattering Measurements of the Structural Phase Transition at Temperatures in High T_c-Oxide YBa_2Cu_3O_x : Electrical Properties of Condensed Matter
- Topographic Study on Staging Transition in H_2SO_4-Graphite Intercalation Compound by in situ Raman Scattering Measurements
- Topography Dependence of Tunneling-Induced Fluorescence from Porphyrin Film
- Internal Friction Due to Localized Relaxation around Y-ions in Single Crystal Yttria-Stabilized Zirconia : Structure and Mechanical and Thermal Properties of Condensed Matter
- Ultrasonic Attenuation Due to Localized Relaxation in Cubic Yttria-Stabilized Zirconia
- Classical Edge Magnetoplasmon in a GaAs/AlGaAs Two-Dimensional Electron System
- The Experimental Study on the Effects of Pause Breathing Patterns on Heart Rate Variability(International Conference on Mind Body Science : Physical and Physiological Approach joint with The Eighteenth Symposium on Life Information Science)
- Thickness and Stress Polarity Effects on the Reliability of the Low Thermal Budget Polyoixdes : Semiconductors
- Induction of Differentiation by Panaxydol in Human Hepatocarcinoma SMMC-7721 Cells via cAMP and MAP Kinase Dependent Mechanism
- Room-Temperature Synthesis of ZnS:Mn Films by H_2 Plasma Chemical Sputtering
- Growth Temperature Dependence of μc-Si:H Films Sputtered with Hydrogen Gas
- Comparison of the Characteristics of Polyoxides Grown by Thermal, Rapid Thermal Oxidation, and Tetraethylorthosilicate Deposition Methods
- Properties of Charge Carrier Transport in Au/Phenyl C61 Butyric Acid Methyl Ester/Au Structure
- Efficient Wavelet-Based Image Retrieval Using Coarse Segmentation and Fine Region Feature Extraction(Image Processing and Video Processing)
- Improvement of Annealing Properties of SiC/Si Structure
- Characterization of Stress in Porous Silicon Films Prepared by Reactive Hydrogen Plasma Sputtering Technique
- Characterization of μc-Si:H Films Prepared by H_2 Sputtering
- Growth Mechanism of ZnS:Mn Films Obtained by Hydrogen Plasma Sputtering and Its Application to a Thin-Film Electroluminescent Device
- Stress Release Behaviors of Amorphous SiC/Si Structure during Annealing : Semiconductors
- Loss Behaviors of Si Substrate during Growth of the SiC Films Prepared by Hydrogen Plasma Sputtering
- Plasma Etch Void Formed at the SiC Film/Si Substrate Interface
- The Effect of the Growth Temperature on Polyoxide by Rapid Thermal Processing
- An Abnormal Temperature Dependence of Conductivity in Fullerene Solids
- Alternating Current of Scanning Tunneling Microscope for Organic Molecules Adsorbed on Metal in Terms of Equivalent Circuit of Scanning Tunneling Microscope
- Epitaxial Growth of Cubic SiC Film on Si Crystal with Curved Surface