Characterization of μc-Si:H Films Prepared by H_2 Sputtering
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概要
- 論文の詳細を見る
Hydrogenated microcrystalline Si films were prepared on fused quartz and Si substrates by H_2. sputtering of a Si target. The grain size increases with the increasing electrical power required for the sputtering, Ps, where the smallest grain size is estimated to be 1.1 nm of the Si and 7.1 nm on the quartz. It is also discovered that Raman spectra change with Ps but in a different manner on the Si and the quartz substrates. A reason for this difference is discussed.
- 社団法人応用物理学会の論文
- 1990-03-20
著者
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MIYASATO Tatsuro
Department of Computer Science and Electronics, Kyushu Institute of Technology
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Tonouchi Masayoshi
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Miyasato Tatsuro
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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MORIYAMA Fuminori
Advanced Technology Research Center, NKK Corporation
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Moriyama Fuminori
Advanced Technology Research Center Nkk Corporation
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Miyasato Tatsuro
Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology
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