Plasma Etch Void Formed at the SiC Film/Si Substrate Interface
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-06-01
著者
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Sun Yong
Department Of Burns & Plastic Surgery Beijing Ji-shui-tan Hospital
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Miyasato Tatsuro
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Sun Yong
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Sun Yong
Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology
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Miyasato Tatsuro
Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology
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- Growth of 3C-SiC on Si Substrate with Ge_C_ Buffer Layer : Semiconductors
- Influence of Oxygen on Formation of Hollow Voids at SiC/Si Interface : Semiconductors
- Fabrication of Nanoscale Cubic SiC Particle Film
- Compositional Changes of SiC/Si Structure during Vacuum Annealing
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- Influence of SiC Cover Layer of Si Substrate on Properties of Cubic SiC Films Prepared by Hydrogen Plasma Sputtering
- Infrared Absorption Properties of Nanocrystalline Cubic SiC Films
- Behaviors of Carbon at Initial Stages of SiC Film Grown on Thermally Oxidized Si Substrate
- Observation of the Formation Processes of Hollow Voids at the Interface between SiC Film and Si Substrate
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