Growth of 3C-SiC on Si Substrate with Ge_<1-0.63>C_<0.63> Buffer Layer : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-10-15
著者
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Sun Yong
Department Of Burns & Plastic Surgery Beijing Ji-shui-tan Hospital
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Sun Y
Department Of Applied Physics Hebei University Of Technology
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MIYASATO Tatsuro
Kyushu Institute of Technology
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Sun Yong
Department Of Computer Science The Queen's University Of Belfast
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Sun Y
Toshiba Res. Europe Ltd. Bristol Gbr
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Miyasato T
Kyushu Institute Of Technology
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Sun Yong
Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology
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