Influence of Oxygen on Formation of Hollow Voids at SiC/Si Interface : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-09-15

著者

• Sun Yong

  Department Of Burns & Plastic Surgery Beijing Ji-shui-tan Hospital

• Sun Y

  Department Of Applied Physics Hebei University Of Technology

• ENOKIDA Toyotsugu

  Quality Evaluation and Chemical Analysis Department, Fukuryou Semicon Engineering Corporation

• HAGINO Hiroyasu

  Quality Evaluation and Chemical Analysis Department, Fukuryou Semicon Engineering Corporation

• MIYASATO Tatsuro

  Kyushu Institute of Technology

• Sun Yong

  Department Of Computer Science The Queen's University Of Belfast

• Hagino H

  Technology Research Institute Of Osaka Prefecture

• Sun Y

  Toshiba Res. Europe Ltd. Bristol Gbr

• Enokida T

  Quality Evaluation And Chemical Analysis Department Fukuryo Semicon Engineering Corporation

• Miyasato T

  Kyushu Institute Of Technology

• Sun Yong

  Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology

• Hagino Hiroyasu

  Quality Evaluation and Chemical Analysis Department, Fukuryo Semicon Engineering Corporation

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• Critical Voltage of π-Cell Liquid Crystal Displays
• Void free at Interface of the SiC Film and Si Substrate
• Effect of Collection Distance on the Lattice Structure of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
• High Anatase-Rutile Transformation Temperature of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition : Structure and Mechanical and Thermal Properties of Condensed Matter
• Novel Mode of Liquid Crystal Display with Narrow Viewing Angle(Structure and Mechanical and Thermal Properties of Condensed Matter)
• Conversion of Si(100) to Si_Ge_xC_y Alloy by Hydrogen Plasma Containing Ge and C Species
• Growth of 3C-SiC on Si Substrate with Ge_C_ Buffer Layer : Semiconductors
• Influence of Oxygen on Formation of Hollow Voids at SiC/Si Interface : Semiconductors
• Fabrication of Nanoscale Cubic SiC Particle Film
• Compositional Changes of SiC/Si Structure during Vacuum Annealing
• Activation Energy of Nanoscale 3C-SiC Island Growth on Si Substrate
• Influence of SiC Cover Layer of Si Substrate on Properties of Cubic SiC Films Prepared by Hydrogen Plasma Sputtering
• Infrared Absorption Properties of Nanocrystalline Cubic SiC Films
• Behaviors of Carbon at Initial Stages of SiC Film Grown on Thermally Oxidized Si Substrate
• Observation of the Formation Processes of Hollow Voids at the Interface between SiC Film and Si Substrate
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• Stress Release Behaviors of Amorphous SiC/Si Structure during Annealing : Semiconductors
• Loss Behaviors of Si Substrate during Growth of the SiC Films Prepared by Hydrogen Plasma Sputtering
• Plasma Etch Void Formed at the SiC Film/Si Substrate Interface
• The Effect of the Growth Temperature on Polyoxide by Rapid Thermal Processing
• An Abnormal Temperature Dependence of Conductivity in Fullerene Solids
• Epitaxial Growth of Cubic SiC Film on Si Crystal with Curved Surface

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