Characterization of Stress in Porous Silicon Films Prepared by Reactive Hydrogen Plasma Sputtering Technique
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概要
- 論文の詳細を見る
Hydrogenated porous silicon (P-Si:H) films with columnar structure are prepared by reactive hydrogen plasma sputtering of silicon. Stress in the films is characterized by X-ray diffraction and Raman scattering measurement. Experimental results show that the stress mainly results due to a lattice expansion (Δa/a_0) of Si grains in the films. Δa/a_0) increases with decrease in Si grain size, and tends towards the limiting value of about 1.2%, both when Si grain size is below 100 Å and when a large amount of amorphous silicon hydrides are present in the films.
- 社団法人応用物理学会の論文
- 1995-10-01
著者
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Sun Yong
Department Of Burns & Plastic Surgery Beijing Ji-shui-tan Hospital
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Miyasato Tatsuro
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Miyasato Tatsuro
Department Of Computer Science And Electronics Kyushu Institute Of Technology:center For Microelectr
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Sun Yong
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Sun Yong
Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology
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Miyasato Tatsuro
Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology
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