Loss Behaviors of Si Substrate during Growth of the SiC Films Prepared by Hydrogen Plasma Sputtering
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概要
- 論文の詳細を見る
Loss behaviors of Si substrates during the growth of β-SiC films, which are grown on the (111) Si substrates kept at 700℃ by hydrogen plasma sputtering of the SiC target, are studied by changing the thickness of the obtained films. The Si loss results in hollow voids with a double-deck structure which are observed at the surface of Si substrate. The Si loss roughens the surface of the Si substrate, and influences the properties of the obtained SiC films.
- 社団法人応用物理学会の論文
- 1997-08-15
著者
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Sun Yong
Department Of Burns & Plastic Surgery Beijing Ji-shui-tan Hospital
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Miyasato Tatsuro
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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