Influence of Effective Masses on the Oscillation of Fowler-Nordheim Tunneling in Thin SiO_2 MOS Capacitors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-11-20
著者
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Ono Yukinori
Ntt Lsi Laboratories
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Ono Yukinori
Ntt Lsi Laboratories Nippon Telegraph And Telephone Corporation
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MAKINO Takahiro
NTT LSI Laboratories, Nippon Telegraph and Telephone Corporation
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Makino Takamitsu
Central Research Laboratory
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Makino T
Central Research Laboratory
関連論文
- Mid-Infrared Photoluminescence from Liquid Phase Epitaxial InAs_Sb_y/InAs Multilayers
- Room Temperature InAs_xP_Sb_y/InAs Photodetectors with High Quantum Efficiency
- Influence of Effective Masses on the Oscillation of Fowler-Nordheim Tunneling in Thin SiO_2 MOS Capacitors
- Origin of Dark Regions in Scanning Tunneling Microscopy Images Formed by Thermal Oxidation of Si(111) Surface
- Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
- Thermal Agglomeration of Thin Single Crystal Si on SiO_2 in Vacuum
- Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
- Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
- Critical Dimension Measurement in Nanometer Scale by Using Scanning Probe Microscopy
- Light-Emitting Diodes with a Peak Wavelength of 5.38 μm from Liquid-Phase Epitaxial Ga_ In_ Sb/InSb Heterostructures(Semiconductors)
- Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs_Sb_/InAs_P_Sb_ Heterostructures
- Room-Temperature Operation of InAsSb/InAsPSb Photodetectors with a Cut-off Wavelength of 4.3 μm
- Influence of Sulphidation Treatment on the Performance of Mid-Infrared InAsPSb/InAs Detectors
- Photoluminescence from a Silicon Quantum Well Formed on Separation by Implanted Oxygen Substrate
- Characterization of Thin Bonded Silicon-on-Insulator Structures by the Microwave Photocomductivity Decay Method
- Contactless Estimation of the Surface Recombination Velocity at High-Low Junction Surfaces Fabricated by the Ion-Implantation Technique
- Uncooled InAsSb photoconductors with long wavelength
- Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08 Heterostructures