Anormalous Segregation of Al during Growth of Al-doped GaSb
スポンサーリンク
概要
著者
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Hayakawa Y.
Research Institute of Electronics, Shizuoka University
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Muller A.
Universidade Federal Do Rio Grande Do Sul
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Kumagawa M.
Research Institute Of Electronics Shizuoka University
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Ohsawa H.
Research Institute of Electronics, Shizuoka University
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Nakano H.
Research Institute of Electronics, Shizuoka University
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Koyama T.
Research Institute of Electronics, Shizuoka University
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Masaki M.
Research Institute of IHI Co. Ltd.
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Takahashi K.
Research Institute of IHI Co. Ltd.
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Dedavid B.
Universidade Federal do Rio Grande do sul
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Eleani C.
Universidade Federal do Rio Grande do sul
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Hayakawa Y.
Research Institute Of Electronics Shizuoka University
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Ohsawa H.
Research Institute Of Electronics Shizuoka University
関連論文
- Arrays of Interacting Magnetic Dots and Wires : Static and Dynamic Properties
- Growth kinetic study of Liquid Phase Electro Epitaxial growth of InAs : a three dimensional simulation approach(NCCG-36)
- Effect of Temperature Gradient on InGaAs Crystal Growth and Its Numerical Analysis
- Anormalous Segregation of Al during Growth of Al-doped GaSb
- Liquid Phase Epitaxial Growth of Multilayered InAs_1-ySb_y(y=0.33) on InAs Substrate and Its Mid-Infrared Device Applications