Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
著者
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Terai Yoshikazu
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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Fujiwara Yasufumi
Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University
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Wakamatsu Ryuta
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Lee Dong-gun
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Koizumi Atsushi
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Dierolf Volkmar
Physics Department, Lehigh University, Bethlehem, PA 18015, U.S.A.
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- Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
- Effect of Plasma Gases on Insulating Properties of Low-Temperature-Deposited SiOCH Films Prepared by Remote Plasma-Enhanced Chemical Vapor Deposition
- Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy
- Metalorganic Vapor Phase Epitaxial Growth Parameter Dependence of Phase Separation in Miscibility Gap of InGaAsP
- Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate
- Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN
- Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate (Special Issue : Recent Advances in Nitride Semiconductors)
- Formation of Eu
- Formation of Eu³⁺ Luminescent Centers in Eu-Doped ZnO Grown by Sputtering-Assisted Metalorganic Chemical Vapor Deposition