Formation of Eu

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概要

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• The photoluminescence (PL) and electrical properties of Eu-doped ZnO (ZnO:Eu) grown by sputtering-assisted metalorganic chemical vapor deposition (SA-MOCVD) were investigated. Sharp PL lines due to intra-4f transition in Eu³⁺ions were observed when ZnO:Eu was annealed at temperatures (T_{\text{a}}) higher than 500 °C in O<inf>2</inf>ambient. In Hall measurements, the as-grown ZnO:Eu showed a high electron density of 3\times 10^{19} cm^-3, indicating that the doped Eu ions act as a donor in ZnO. The electron density decreased rapidly at T_{\text{a}}\geq 500 °C and was 2\times 10^{17} cm^-3at T_{\text{a}} = 600 °C. These results revealed that a complex consisting of a Eu³⁺ion and an interstitial oxygen (Eu³⁺--O<inf>\text{i</inf>complex) is formed by high-temperature annealing and acts as a Eu³⁺luminescent center in ZnO.

• The Japan Society of Applied Physicsの論文
• 2013-11-25

著者

• Tsuji Takahiro

  Division of Cardiovascular Medicine, Toho University Ohashi Medical Center

• Terai Yoshikazu

  Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University

• Fujiwara Yasufumi

  Division Of Materials And Manufacturing Science Graduate School Of Engineering Osaka University

• Tsuji Takahiro

  Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Kamarudin Muhammad

  Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

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