Investigation of Anomalous Optical Characteristics of InGaAsP Layers on GaAs Substrates Grown by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る

• We investigated the growth of InGaAsP layers on GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) for application in optical devices. Anomalous large redshifts of photoluminescence (PL) were observed for samples of specific In1-xGaxAsyP1-y compositions ($x$ and $y$ are approximately 0.85 and 0.65, respectively). We showed that these large redshifts were induced by phase separation in the miscibility gap of InGaAsP. In order to clarify the threshold value of the phase separation that causes this anomalous PL emission, the phase separation was quantified by combining PL spectroscopy and energy dispersive X-ray spectroscopy (EDX). It was found for the first time that PL redshifts start to occur when the phase-separation quantity of the group-III element of In1-xGaxAsyP1-y crystals ($\Delta x$) exceeds ${\sim}0.05$. Such large PL redshifts can be attributed to the emission from defect-related energy levels caused by phase separation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-03-25

著者

• TAKEMI Masayoshi

  High Frequency & Optical Device Works., Mitsubishi Electric Corporation

• Ono Kenichi

  High Frequency & Optical Device Works, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

• Takemi Masayoshi

  High Frequency and Optical Device Works, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

関連論文

• High Power operation of GaN-based laser diode with high slope efficiency
• p-Substrate Partially Inverted Buried Heterostructure Distributed Feedback Laser Diode Performance Improvement by Inserting Zn Diffusion-Stopping Layer
• Metalorganic Vapor Phase Epitaxial Growth Parameter Dependence of Phase Separation in Miscibility Gap of InGaAsP
• Investigation of Anomalous Optical Characteristics of InGaAsP Layers on GaAs Substrates Grown by Metalorganic Vapor Phase Epitaxy

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