Kawahara Jun | LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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概要
- Kawahara Junの詳細を見る
- 同名の論文著者
- LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japanの論文著者
関連著者
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Inoue Naoya
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Kume Ippei
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Kawahara Jun
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Furutake Naoya
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Hayashi Yoshihiro
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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林 喜宏
NECシステムデバイス研究所
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林 喜宏
日本電気株式会社デバイスプラットフォーム研究所
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林 喜宏
日本電気株式会社マイクロエレクトロニクス研究所 超高集積回路研究部
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HAYASHI Yoshihiro
Device Platforms Research Labs., NEC.
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Hayashi Yoshihiro
Nec Corporation
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Ueki Makoto
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Ikarashi Nobuyuki
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Saitoh Shinobu
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Hayashi Yoshihiro
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
Microelectronics Research Laboratories, NEC, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Takeda Kouichi
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Shirai Hiroki
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Kazama Kenya
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Watarai Msasatoshi
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Sakoh Takashi
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Takahashi Takafumi
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Ogura Takashi
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Taiji Toshiji
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Kasama Yoshiko
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Sakamoto Misato
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Hane Masami
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
著作論文
- Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-$k$ Films
- Basic Performance of a Logic Intellectual Property Compatible Embedded Dynamic Random Access Memory with Cylinder Capacitors in Low-k/Cu Back End on the Line Layers (Special Issue : Solid State Devices and Materials (1))