Kasama Yoshiko | Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan

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概要

関連著者

Inoue Naoya
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
Kume Ippei
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
Kawahara Jun
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
Furutake Naoya
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
Hayashi Yoshihiro
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
Takeda Kouichi
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
Shirai Hiroki
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
Kazama Kenya
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
Watarai Msasatoshi
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
Sakoh Takashi
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
Takahashi Takafumi
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
Ogura Takashi
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
Taiji Toshiji
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
Kasama Yoshiko
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
Sakamoto Misato
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
Hane Masami
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan

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著作論文

Basic Performance of a Logic Intellectual Property Compatible Embedded Dynamic Random Access Memory with Cylinder Capacitors in Low-k/Cu Back End on the Line Layers (Special Issue : Solid State Devices and Materials (1))

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