Basic Performance of a Logic Intellectual Property Compatible Embedded Dynamic Random Access Memory with Cylinder Capacitors in Low-k/Cu Back End on the Line Layers (Special Issue : Solid State Devices and Materials (1))
スポンサーリンク
概要
著者
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Inoue Naoya
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Kume Ippei
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Kawahara Jun
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Furutake Naoya
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Hayashi Yoshihiro
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Takeda Kouichi
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Shirai Hiroki
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Kazama Kenya
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Watarai Msasatoshi
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Sakoh Takashi
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Takahashi Takafumi
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Ogura Takashi
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Taiji Toshiji
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Kasama Yoshiko
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Sakamoto Misato
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
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Hane Masami
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan
関連論文
- Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-$k$ Films
- Basic Performance of a Logic Intellectual Property Compatible Embedded Dynamic Random Access Memory with Cylinder Capacitors in Low-k/Cu Back End on the Line Layers (Special Issue : Solid State Devices and Materials (1))
- Effects of Low-k Stack Structure on Performance of Complementary Metal Oxide Semiconductor Devices and Chip Package Interaction Failure