A Novel Multilayered Ni–Zn-Ferrite/TaN Film for RF/Mobile Applications

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概要

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• A novel multilayered Ni–Zn-ferrite/TaN (MFT) film is developed for RF/mobile complementary metal oxide semiconductor (CMOS) applications. The Ni–Zn ferrite (Ni0.5Zn0.5Fe2O4) film is deposited by low-temperature RF magnetron sputtering technique applicable for conventional low-$k$/Cu interconnects in advanced CMOS LSI. In the MFT film, a stacking unit of thin Ni–Zn-ferrite and thin TaN is laminated to enhance the ferrite (311)spinel orientation close to the magnetization easy axis of the ferrite. The saturated magnetization ($M_{\text{s}}$) increased 50% referred to the single-layer Ni–Zn-ferrite/TaN, and the coercivity ($H_{\text{c}}$) decreased one-fifth desirable for the high speed switching. By physical-based modeling, it is proved that the fraction of the (311)-orientation region in the total ferrite thickness is very important to improve the magnetic properties. In addition to the high resistivity ($\rho=10$ M$\Omega$ cm) to suppress eddy current loss, the MFT film is effective to confine and enhance the magnetic field in the on-chip inductor in GHz range, suitable for RF/mobile applications.

• 2010-04-25

著者

• 林 喜宏

  NECシステムデバイス研究所

• 林 喜宏

  日本電気株式会社デバイスプラットフォーム研究所

• 林 喜宏

  日本電気株式会社マイクロエレクトロニクス研究所 超高集積回路研究部

• HAYASHI Yoshihiro

  Device Platforms Research Labs., NEC.

• Hayashi Yoshihiro

  Nec Corporation

• Naoya Inoue

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Inoue Naoya

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Furutake Naoya

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Yoshihiro Hayashi

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Hayashi Yoshihiro

  Microelectronics Research Laboratories, NEC, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan

• Kaneko Kishou

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Kishou Kaneko

  LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

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