Inoue Naoya | LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
スポンサーリンク
概要
- Inoue Naoyaの詳細を見る
- 同名の論文著者
- LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japanの論文著者
関連著者
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林 喜宏
NECシステムデバイス研究所
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林 喜宏
日本電気株式会社デバイスプラットフォーム研究所
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林 喜宏
日本電気株式会社マイクロエレクトロニクス研究所 超高集積回路研究部
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HAYASHI Yoshihiro
Device Platforms Research Labs., NEC.
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Hayashi Yoshihiro
Nec Corporation
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Inoue Naoya
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
System Devices Research Laboratories, NEC, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
System Devices and Fundamental Research, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
Microelectronics Research Laboratories, NEC, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Furutake Naoya
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Saito Shinobu
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Yoshihiro Hayashi
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hayashi Yoshihiro
LSI Fundamental Research Lab., NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Kaneko Kishou
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Okada Norio
Advanced Technology Center National Astronomical Observatory
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Fukai Toshinori
Advanced Device Development Division Nec Electronics Corporation
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Naoya Inoue
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ippei Kume
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ueki Makoto
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ueki Makoto
LSI Fundamental Research Lab., NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Tada Munehiro
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Kawahara Jun
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Yamamoto Hironori
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ito Fuminori
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Miyake Shinichi
Advanced Devices Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Takeuchi Tsuneo
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Tagami Masayoshi
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hijioka Kenichiro
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ito Takatoshi
Advanced ASIC Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Shibue Yasuo
Advanced ASIC Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Senou Takefumi
Advanced ASIC Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Ikeda Rikikazu
Advanced ASIC Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Shinobu Saito
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Fukai Toshinori
Advanced Devices Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Hijioka Ken-ichiro
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Okada Norio
Advanced Devices Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Jun Kawahara
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Kume Ippei
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Naoya Furutake
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Naoya Furutake
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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Kishou Kaneko
LSI Fundamental Research Laboratory, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
著作論文
- Precise Taper-Angle-Control of Via Holes for Reliable Scaled-Down Low-$k$/Cu Interconnects
- Porous Low-$k$ Impacts on Performance of Advanced LSI Devices with GHz Operations
- A Novel Multilayered Ni–Zn-Ferrite/TaN Film for RF/Mobile Applications
- Microstructure Control of Low-Loss Ni–Zn Ferrite by Low-Temperature Sputtering for On-Chip Magnetic Film