Channel Strain in Advanced CMOSFETs Measured Using Nano-Beam Electron Diffraction
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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TODA Akio
Device Platforms Research Laboratories, NEC Corporation
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NAKAMURA Hidetatsu
Advanced Device Development Division, NEC Electronics Corporation
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FUKAI Toshinori
Advanced Device Development Division, NEC Electronics Corporation
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IKARASHI Nobuyuki
Device Platforms Research Laboratories, NEC Corporation
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Toda Akio
Device Platforms Research Laboratories Nec Corporation
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Fukai Toshinori
Advanced Device Development Division Nec Electronics Corporation
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Nakamura Hidetatsu
Advanced Device Development Division Nec Electronics Corporation
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Ikarashi Nobuyuki
Device Platforms Research Laboratories Nec Corporation
関連論文
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- Channel Strain in Advanced Complementary Metal–Oxide–Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction