Nondestructive Warpage Measurements of LSI Chips in a Stacked System in Package by Using High-Energy X-ray Diffraction

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概要

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• We describe high-energy X-ray diffraction to examine the warpage of packaged LSI chips nondestructively. Less absorption of the high-energy X-rays enables us to observe diffracted X-rays through packaging materials and LSI chips. We demonstrate that it is possible to measure the warpage of LSI chips in a stacked system in package (SiP). Although an LSI chip in a single-chip ball grid array (BGA) package simply warps into a convex-down shape, the LSI chips packaged in the BGA package as a stacked SiP warp into the shape of waves. It is inferred from results of our examination that the stress due to a printed circuit board substrate and molding resin affects chip warpage.

• 2010-04-25

著者

• Toda Akio

  Device Platforms Research Laboratories Nec Corporation

• Ikarashi Nobuyuki

  Device Platforms Research Laboratories Nec Corporation

• Nobuyuki Ikarashi

  Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1189, Japan

• Akio Toda

  Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1189, Japan

関連論文

• Channel Strain in Advanced CMOSFETs Measured Using Nano-Beam Electron Diffraction
• Nondestructive Warpage Measurements of LSI Chips in a Stacked System in Package by Using High-Energy X-ray Diffraction
• Channel Strain in Advanced Complementary Metal–Oxide–Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction

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