Novel Cost-Effective Photoreceiver Structure with Monolithically-Integrated Polymeric Waveguide Mirrors and Solder Bumps for Future 100-Gbit/s Class Receiver Modules
スポンサーリンク
概要
- 論文の詳細を見る
We propose a new cost-effective structure for a future 100 Gbit/s-class optoelectronic integrated circuit (OEIC) with optical interconnection and a receiver module. This module is a flat compact package and achieves good optical and high-speed electrical performance. A polymeric optical waveguide and a curved micro-mirror are monolithically integrated on the OEIC as the optical interconnection. Furthermore, this OEIC chip is assembled using solder bumps and passively self-aligned technique. We confirmed the feasibility of applying this novel structure to future cost-effective 100-Gbit/s class receiver modules.
- 2008-07-25
著者
-
AKEYOSHI Tomoyuki
NTT Photonics Laboratories
-
Tokumitsu Masami
Ntt Photonics Laboratories
-
ARATAKE Atsushi
NTT Photonics Laboratories
-
Tokumitsu Masami
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Akeyoshi Tomoyuki
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Aratake Atsushi
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
関連論文
- A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation(Optical)
- Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode (Special Issue on Integrated Electronics and New System Paradigms)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band
- W-band Waveguide Amplifier Module with InP-HEMT MMIC for Millimeter-wave Applications
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
- InP-based High-speed Transistors and Their IC Applications
- Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- Short Spot-Size-Converters Using BCB Cores for Efficient Fiber Coupling
- InP HEMT Technology for High-Speed Logic and Communications(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- InP HEMT Technology for High-Speed Logic and Communications(Session 2 Compound Semiconductor Devices I,AWAD2006)
- InP HEMT Technology for High-Speed Logic and Communications(Session 2 Compound Semiconductor Devices I,AWAD2006)
- Novel Cost-Effective Photoreceiver Structure with Monolithically-Integrated Polymeric Waveguide Mirrors and Solder Bumps for Future 100-Gbit/s Class Receiver Modules
- WDM transmission in 1.0.MU.m band over PCF using supercontinuum source