Single-Electron Charging Effects in a Semiconductor Quantum Wire with Side-Coupled Quantum Dot

概要

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We report on experimental studies of a quantum wire with side-coupled quantum dot defined by surface gate electrodes patterned on top of a GaAs/AlGaAs heterostructure. The dot is side-coupled to the wire by means of a split-gate electrode allowing for a control of coupling strength. Clear signatures of single-electron charging are observed in the low-temperature wire conductance within a broad range of tunnel couplings and wire widths. The oscillations in wire conductance associated with Coulomb peaks in the dot remain being visible for split-gate conductances exceeding $G_{0}=2e^{2}/h$ and for mean wire conductances of up to $2.5G_{0}$. We explain this behavior as consequence of the two-dimensional sample geometry which can lead to asymmetric and effectively reduced coupling between the dot and the conducting modes in the wire and propose a modified sample layout that should be suitable to increase the coupling.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-10-15