Gate modified Giant Andreev Backscattering in a Superconductor-Semiconductor Junction : Condensed Matter: Electronic Properties, etc.
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概要
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We investigated giant Andreev backscattering (GAB) in a superconductor (S)-semiconductor two-dimensional electron gas (2DEG) junction with a special gate configuration: a split gate which produces a quantum point contact (QPC) and an ordinary wide gate set between S and the QPC, which alters the properties of the diffusive transport in the 2DEG. Different combinations of the two gates voltages offered us a many"samples"for one junction, which enabled us to systematically study GAB. by applying a negative split gate voltage, the number of modes in the QPC was decreased and a crossover from the reentrant conductance of the disordered 2DEG to enhanced (peaked) QPC conductance was observed. The peak width at different degrees of diffusiveness clearly showed that coherent Andreev backscattering is essential for the enhancement. We discuss the influence of the bias voltage and the magnetic field on the enhancement quantitatively.
- 社団法人日本物理学会の論文
- 2000-06-15
著者
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Toyoda Etsuko
Ntt Basic Research Laboratories
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Takayanagi Hideaki
Ntt Basic Research Laboratories
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Nakano Hayato
Ntt Basic Research Laboratories
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