Model Study of Ballistic S-2DEG-S Josephson Field Effect Transistors
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概要
- 論文の詳細を見る
We analyze the variation of the critical Josephson current with gate voltage in a ballistic SNS heterostructure. With increasing gate voltage the number of bound Andrev levels increases, the junction becomes effectively long, and the critical current is suppressed.
- 社団法人応用物理学会の論文
- 1999-01-30
著者
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Takayanagi Hideaki
Ntt Basic Research Laboratories
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Shumeiko Vitaly
Department Of Microelectronics And Nanoscience Chalmers University Of Technology And Goteborg Univer
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WENDIN Goran
Department of Microelectronics and Nanoscience, Chalmers University of Technology and Goteborg Unive
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SAMUELSSON Peter
Department of Microelectronics and Nanoscience, Chalmers University of Technology and Goteborg Unive
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Wendin Goran
Department Of Microelectronics And Nanoscience Chalmers University Of Technology And Goteborg Univer
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Samuelsson Peter
Department Of Microelectronics And Nanoscience Chalmers University Of Technology And Goteborg Univer
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