A Compact 40GHz MMIC Power Amplifier with Improved Power Stage Design(Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
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概要
- 論文の詳細を見る
A compact MMIC power amplifier which delivers P_1dB of 25.8dBm(380mW)at 40GHz has been developed. To make the chip width narrower, only one unit block using two parallel HEMTs is applied for a power stage. For achieving broadband interstage matching when using wide gate-width unit devices in the power stage, a new configuration of a unit block which contains a shunt capacitance is proposed.
- 社団法人電子情報通信学会の論文
- 2001-10-01
著者
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Sasaki F
Toshiba Corp. Kawasaki‐shi Jpn
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Sasaki Fumio
Semiconductor Company
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YOSHINAGA Hiroyuki
Semiconductor Company, Toshiba Corporation
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SHIZUKI Yasushi
Semiconductor Devices, Microwave Solid-State Department, Komukai Operations, Social Infrastructure S
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ONODERA Ken
Semiconductor Devices, Microwave Solid-State Department, Komukai Operations, Social Infrastructure S
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ARAI Kazuhiro
Semiconductor Devices, Microwave Solid-State Department, Komukai Operations, Social Infrastructure S
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OZAKI Juichi
Semiconductor Devices, Microwqve Solid-State Department, Komukai Operations, Social Infrastructure S
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Onodera Ken
Komukai Operations Toshiba Corporation
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Arai K
Sendai Research Center Nict
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Onodera Kiyomitsu
Komukai Operations Toshiba Corporation
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Ozaki Juichi
Semiconductor Devices Microwqve Solid-state Department Komukai Operations Social Infrastructure Syst
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Shizuki Y
Semiconductor Devices Microwave Solid-state Department Komukai Operations Social Infrastructure Syst
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Yoshinaga H
Semiconductor Company Toshiba Corporation
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