A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs

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概要

• 論文の詳細を見る

• We have developed a planar devic technology consisting of 0.15-μm Au/WSiN-gate GaAs-heterostructure MESFETs (HMESFETs) fabricated by self-aligned ion-implantation. The gate-drain breakdown voltage has been improved to 10 V by using an asymmetric LDD structure, and the maximum oscillation frequency is 190 GHz. Because asymmetric and symmetric FETs can be fabricated simultaneously, this technology is suitable for use in making multi-functional millimeter-wave MMICs.

• 社団法人電子情報通信学会の論文
• 1995-08-25

著者

• Inoue K

  Kwansei Gakuin Univ. Sanda Jpn

• Onodera Ken

  Komukai Operations Toshiba Corporation

• Nishimura Kazumi

  Ntt System Electronics Laboratories

• Inoue K.

  Univ. Tokyo Tokyo Jpn

• Inoue K

  Semiconductor Group System-lsi Div. Mitsubishi Electric Co.

• Onodera Kiyomitsu

  Komukai Operations Toshiba Corporation

• Nishimura K

  Kddi R&d Laboratories Inc.:optical Industry And Technology Development Association

• Tokumitsu Masami

  NTT LSI Laboratories

• Nishimura Kazumi

  NTT LSI Laboratories

• Yamasaki Kimiyoshi

  NTT LSI Laboratories

• Hyuga F

  Ntt System Electronics Lab. Kanagawa Jpn

• Inoue K

  Univ. Tokyo Tokyo Jpn

• Ito Kosei

  Graduate School Of Agricultural Science Tohoku University

• YAMASAKI Kimiyoshi

  NTT System Electronics Laboratories

• Onodera Kiyomitsu

  NTT LSI Laboratories

• Inoue Kou

  NTT LSI Laboratories

• Hyuga Fumiaki

  NTT LSI Laboratories

• Tokumitsu M

  Ntt Electronics Corporation

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