Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation (Special Issue on Heterostructure Electron Devices)

概要

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Gamma(γ)-ray irradiation effects have been investigated on three types of low-noise HEMTs, AlGaAs / GaAs conventional HEMT (conv. HEMT), AlGaAs / InGaAs pseudomorphic HEMT (P-HEMT) and InAlAs / InGaAs / InP HEMT (InP-based HEMT). The dose of irradiated γ-rays ranges from 1×10^5 to 1×10^8 rad. DC and RF characteristics of each type of HEMT are measured before and after irradiation and the parameter changes are investigated. For conv. HEMT and P-HEMT, no degradation of DC parameter is observed up to 10^8 rad, while noise figure (NF) at 12 GHz remains constant up to 10^7 rad and degrades by 0.1 dB at 10^8 rad. The InP-based HEMT shows I_<DSS> and g_m increase by about 10% at a dose of 10^8 rad and its NF at 18 GHz lowers gradually with the radiation dose. It has been found that the radiation hardness is greater than 10^7 rad for all types of HEMTs and over a hundred years of life can be expected against γ-ray irradiation in the space environment.
社団法人電子情報通信学会の論文
1993-09-25