Sasaki F | Toshiba Corp. Kawasaki‐shi Jpn
スポンサーリンク
概要
関連著者
-
Sasaki F
Toshiba Corp. Kawasaki‐shi Jpn
-
Sasaki Fumio
Semiconductor Company
-
YOSHINAGA Hiroyuki
Semiconductor Company, Toshiba Corporation
-
Arai K
Sendai Research Center Nict
-
Yoshinaga H
Semiconductor Company Toshiba Corporation
-
ONO Naoko
Corporate Research & Development Center, Toshiba Corporation
-
ARAI Kazuhiro
Komukai Operations, Toshiba Corporation
-
ISEKI Yuji
Corporate Research & Development Center, Toshiba Corporation
-
Iseki Yuji
Komukai Operations Toshiba Corporation
-
Ono N
Corporate Research & Development Center Toshiba Corporation
-
Saito Yasunobu
Komukai Works, TOSHIBA CORPORATION
-
Sasaki Fumio
Komukai Works, TOSHIBA CORPORATION
-
Kawasaki Hisao
Komukai Works, TOSHIBA CORPORATION
-
Ishimura Hiroshi
Komukai Works, TOSHIBA CORPORATION
-
Tokuda Hirokuni
Komukai Works, TOSHIBA CORPORATION
-
Ohtomo Motoharu
Komukai Works, TOSHIBA CORPORATION
-
SHIZUKI Yasushi
Semiconductor Devices, Microwave Solid-State Department, Komukai Operations, Social Infrastructure S
-
ONODERA Ken
Semiconductor Devices, Microwave Solid-State Department, Komukai Operations, Social Infrastructure S
-
ARAI Kazuhiro
Semiconductor Devices, Microwave Solid-State Department, Komukai Operations, Social Infrastructure S
-
OZAKI Juichi
Semiconductor Devices, Microwqve Solid-State Department, Komukai Operations, Social Infrastructure S
-
Onodera Ken
Komukai Operations Toshiba Corporation
-
Onodera Kiyomitsu
Komukai Operations Toshiba Corporation
-
Ozaki Juichi
Semiconductor Devices Microwqve Solid-state Department Komukai Operations Social Infrastructure Syst
-
Kawasaki Hisao
Komukai Works Toshiba Corporation
-
Saito Yasunobu
Komukai Works Toshiba Corporation
-
Tokuda Hirokuni
Komukai Works Toshiba Corporation
-
Ohtomo M
Tokyo Engineering Univ. Hachioji‐shi Jpn
-
Shizuki Y
Semiconductor Devices Microwave Solid-state Department Komukai Operations Social Infrastructure Syst
-
Ishimura H
Nec Co. Tokyo Jpn
著作論文
- Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation (Special Issue on Heterostructure Electron Devices)
- Characteristics of GaAs HEMTs with Flip-Chip Interconnections(Amplifier)(Recent Trends on Microwave and Millimeter Wave Application Technology)
- Characteristics of GaAs HEMTs with Flip-Chip Interconnections
- A Compact 40GHz MMIC Power Amplifier with Improved Power Stage Design(Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)