Dual-Frequency Matching Technique and Its Application to an Octave-Band (30-60 GHz) MMIC Amplifier
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概要
- 論文の詳細を見る
A single-stage dual-frequency matching network that can simultaneously transform a transistor reflection coefficient to zero at two separate frequencies (a lower frequency f_L and a higher frequency f_H) is proposed. The network is made by adding a shorted stub, the length of which is a quarter-wavelength at f_H, to a conventional L-section matching network composed of a series transmission line and an open stub. The concept of dual-frequency matching is based on the fact that the synthesized shunt admittance of the open and shorted stubs changes from capacitive at f_H to inductive at f_L. By means of the single-stage matching network, broad-band amplifier performance, the bandwidth of which is given as 〜 (f_H-f_L), can be easily obtained with almost the same design procedures and circuit area used for conventional narrow-band amplifiers. In this paper, the function of the dual-frequency matching network is analyzed in detail and an application of the matching technique to a two-stage amplifier is described. A broad-band performance of |S_21|>7.4 dB at 27.0-62.5 GHz has been achieved with a GaAs P-HEMT two-stage MMIC amplifier.
- 社団法人電子情報通信学会の論文
- 1997-12-25
著者
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NAKAJIMA Hiroki
NTT System Electronics Laboratories
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Muraguchi Masahiro
Ntt Wireless Systems Laboratories
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