Measurements of Lattice Parameters and Half-Widths of the Rocking Curve on GaAs Crystal by the X-Ray Double-Crystal Method Using a Cu K_α Doublet
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概要
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GaAs wafers grown by HB and LEC techniques were appraised by the double-crystal method using a Cu Kα doublet. Distributions of lattice strains and defect density along the <110> radial direction on wafers have been obtained from measurements of lattice parameters and half-widths of the rocking curve, respectively.
- 社団法人応用物理学会の論文
- 1988-03-20
著者
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Futagami Koji
Research Institute For Applied Mechanics Kyushu University
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Futagami Koji
Department Of Applied Physics Faculty Of Engineering Miyazaki University
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Futagami Koji
Research Institute For Applied Mechanics University Of Kyushu
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Futagami Koji
Department Of Applied Physics Faculty Of Engineering Kyushu University
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Fukumori T
Miyazaki Univ. Miyazaki Jpn
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Fukumori Taichiro
Department Of Applied Physics Faculty Of Engineering Miyazaki University
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