Mechanical Behavior of Dislocations in Si Single Crystals Observed by Topography with Scanning Soller Slit Assembly
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概要
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A high temperature tensile device was developed as an accessory for the camera for X-ray diffraction topography with a scanning Soller slit assembly. This device is capable of taking topographs for specimens under tensile stresses (<4 kgw) at various temperatures (<800℃). Some mechanical behaviors of dislocation in Si crystals have been observed with the apparatus. The minimum shear stressesτ_i to nucleate dislocations were measured to be 272 g/mm^2, 242 g/mm^2 and 182 g/mm^2 at the temperatures of 700℃, 750℃ and 790℃, respectively. It was found that the velocities V_<60> of the fresh 60°-dislocations decrease with the time of duration of loading with the shear stress of 200 g/mm^2 at 790℃. Many dotted lattice defects are observed in the specimen after cooling.
- 社団法人応用物理学会の論文
- 1974-04-05
著者
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Oki Sigeru
Department Of Science Fukuoka University
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Futagami Koji
Research Institute For Applied Mechanics Kyushu University
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Futagami Koji
Department Of Applied Physics Faculty Of Engineering Miyazaki University
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Futagami Koji
Research Institute For Applied Mechanics University Of Kyushu
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