X-Ray Topographic Observations of Minute Lattice Distortion near the Surface of (100) Silicon Crystals

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概要

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• The characterization of minute lattice distortion in mirror-polished (100) silicon wafers was performed by the Berg-Barrett method using the extremely asymmetric X-ray diffraction of the 311 reflection with CuK$\alpha_{1}$ or CuK$\beta$ radiations. A series of X-ray topographs were taken at a glancing angle of 0.15–0.20° near the critical angle of total reflection. This experimental condition is realized using the diffraction geometry of the specimen surface making angles $\Delta\alpha$ (approximately 2.60° and $-0.28$° for CuK$\alpha_{1}$ and K$\beta$, respectively) with the (100) lattice plane. For silicon wafers with 25-nm-thick oxide films, the local variation in the orientation of the lattice plane occurring at the film boundary was observed, and lattice distortion images near the surface produced by the mechanochemical polishing were clearly visualized.

• 2004-01-15

著者

• Futagami Koji

  Section Of Applied Physics Faculty Of Engineering Kyushu Sangyo University

• Fukumori Taichiro

  Department Of Applied Physics Faculty Of Engineering Miyazaki University

• Futagami Koji

  Section of Applied Physics, Faculty of Engineering, Kyusyu Sangyo University, 2-3-1 Higashi-ku, Matsukadai, Fukuoka 813-8503, Japan

• Sakamoto Masayuki

  Asahi Kasei Microsystem Kyusyu Co., 3-7-1 Nishi-shinjuku, Shinjyuku, Tokyo 160-0023, Japan

• Hirooka Shunji

  Seiko Epson Corporation, 3-3-5 Owa, Suwa, Nagano 392-0001, Japan

関連論文

• Application of Position-Sensitive Proportional Counter to X-Ray Spectroscopy
• Precision Lattice Spacing Measurements Using X-Ray Cu Kα Doublet
• Measurements of Lattice Parameters and Half-Widths of the Rocking Curve on GaAs Crystal by the X-Ray Double-Crystal Method Using a Cu K_α Doublet
• X-Ray Double-Crystal Method for Crystal Lattice Parameter Measurements Using Cu K_α Doublet
• X-Ray Topographic Observations of Minute Lattice Distortion near the Surface of (100) Silicon Crystals
• Observations of Lattice Distortions near Silicon Surfaces Implanted with Low-Energy Nitrogen Ions by Reflection X-ray Topography
• Measurements of Minute Lattice Distortions in Silicon Crystals by X-Ray Double-Crystal Topography Using Extremely Asymmetric Reflection

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