Observations of Lattice Distortions near Silicon Surfaces Implanted with Low-Energy Nitrogen Ions by Reflection X-ray Topography

概要

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Mirror-polished Czochralski-grown wafers with near-(100)-oriented surfaces were implanted with N+ at 8 keV energy at a dose of $1 \times 10^{15}$ cm-2. Lattice distortions produced by the implantation process were observed by X-ray double-crystal topography using extremely asymmetric reflection. The intensity contrast caused by the lattice extensions in thin layers was clearly visualized. By annealing at 700°C for more than 90 min, the imperfect crystal in the ion-implanted region evidently recovers to a more perfect one, except for the boundary of the implanted region. The lattice distortions at the boundary, consisting of a narrow striated region, are thought to be due primarily to variations in the lattice spacing that has been deformed nonelastically. From a series of topographs taken by changing the glancing angle from the low-angle to the high-angle side of the Bragg peak, the differences in lattice spacing between the striated portions and the unimplanted regions were estimated.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-08-15