Nonlinear Conductivity of Poly(3-methylthiophene) under a Low Electric Field in the Low Frequency Range : Electrical Properties of Condensed Matter

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-06-20

著者

• Ito K

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

• Ito Kohzo

  Research Institute For Polymers And Textiles

• Tanabe Yoshikazu

  Research Institutefor Polymers And Textiles

• Sato Masa-aki

  Research Institutefor Polymers And Textiles

• KAERIYAMA Kyoji

  Research Institutefor Polymers and Textiles

• Tanabe Yoshikazu

  Research And Development Center Toshiba Corp.

• Kaeriyama Kyoji

  Research Institute for Polymers and Textiles

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• A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers
• A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs (Special Issue on Low-Power and High-Speed LSI Technologies)
• A Buried-Channel WN_x/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System
• Buried-Channel WN_x/W Self-Aligned GaAs MESFET Process with Selectively Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications
• Nonlinear Conductivity of Poly(3-methylthiophene) under a Low Electric Field in the Low Frequency Range : Electrical Properties of Condensed Matter
• Photoconduction in Poly(p-Phenylene Sulfide) Films near the Absorption Edge : Chemistry (incl. physical process)
• Spectral Distribution of Photocurrent near the Absorption Edge : Optical Properties of Condensed Matter
• Synthesis and Mesomorphic Properties of 1, 10-Dialkylpermethyldecasilanes
• Liquid Crystalline Behavior of Linear Permethyloligosilanes
• Liquid Crystalline Oligosilanes with Alkoxybiphenyl Groups
• Photochromic Property of Triphenylformazan Films Prepared by Vacuum Evaporation
• A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers
• The preparation of poly(3-methoxy-2,5-thiophenediyl) with iron(III) chloride and its properties.
• Preparation of noble metal organosols containing polyethylene glycol mono-p-nonylphenyl ether.

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