Application of KrF Excimer Laser Lithography to 256Mb DRAM Fabrication (Special Issue on LSI Memories)

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概要

• 論文の詳細を見る

• 256 MbDRAM chips have been fabricated by mix-and-match method using high NA KrF excimer laser stepper and i-line stepper. In the case of KrF stepper, the negative siloxane resist is used for rectangular and wiring patterns and the positive novolak-resin resist is used for hole patterns. Both of these two kinds of resist produce accurate pattern shape, allowable pattern profile, satisfactory depth of focus and sufficient overlay accuracy for device fabrication in 0.25 μm design rule.

• 社団法人電子情報通信学会の論文
• 1993-11-25

著者

• YOSHINO Hiroshi

  Tohoku University

• Ishida Shinji

  Ulsi Devices Development Laboratories Nec Corporation

• Ishida S

  Toshiba Microelectronics Corp.

• Kondoh Kenji

  Ulsi Device Development Laboratories Nec Corp.

• AIZAKI Naoaki

  ULSI Device Development Laboratories, NEC Corporation

• Fukuzawa Shin-ichi

  ULSI Devices Development Laboratories, NEC Corporation

• Yoshino Hiroshi

  ULSI Devices Development Laboratories, NEC Corporation

• Yoshii Tsuyoshi

  ULSI Devices Development Laboratories, NEC Corporation

• Yoshino H

  Tohoku University

• Aizaki N

  Ulsi Device Development Labs. Nec Corporation

• Fukuzawa Shin-ichi

  Ulsi Devices Development Laboratories Nec Corporation

• Yoshii Tsuyoshi

  Ulsi Devices Development Laboratories Nec Corporation

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