Deep-Level Transient Spectroscopy Spectra of Drain Current of Si-Implanted GaAs Metal-Semiconductor Field-Effect Transistors Having Large and Small Low-Frequency Oscillations

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概要

• 論文の詳細を見る

• We report on the drain-current (Id) Deep-level transient s-pectroscopy (DLTS) spectra of Si-implanted metal-semiconductor field effect transistors (MESFETs) with strong or weak Id low-frequency oscillations (LFOs) under the condition of high drain voltages (3 V-7 V). We found no distinguishing features directly related to the Id-LFO in these spectra having large peaks characteristic of the DLTS spectrum. These results imply that deep centers in the MESFET channel layer are not the direct origin of the Id-LFO.

• 社団法人応用物理学会の論文
• 1991-09-15

著者

• Inoue Kazuhiko

  Laboratory Of Brain Science Faculty Of Integrated Arts And Sciences Hiroshima University

• SAITO Yasuyuki

  Microelectronics Center in Tamagawa Works, Toshiba Corporation

• Inoue K

  Laboratory Of Brain Science Faculty Of Integrated Arts And Sciences Hiroshima University

• Tomizawa Y

  General R&d Lab. Taiyo Yuden Co. Ltd.

• Saito Yasuyuki

  Micro-electronics Center In Tamagawa Works Toshiba Corporation

• SUGA Toru

  Micro-electronics Center in Tamagawa Works, Toshiba Corporation

• INOUE Kazuhiko

  Micro-electronics Center in Tamagawa Works, Toshiba Corporation

• MITANI Tatsuro

  Micro-electronics Center in Tamagawa Works, Toshiba Corporation

• TOMIZAWA Yutaka

  Micro-electronics Center in Tamagawa Works, Toshiba Corporation

• Suga Toru

  Micro-electronics Center In Tamagawa Works Toshiba Corporation

• Mitani Tatsuro

  Micro-electronics Center In Tamagawa Works Toshiba Corporation

• Tomizawa Yutaka

  Micro-electronics Center In Tamagawa Works Toshiba Corporation

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• Deep-Level Transient Spectroscopy Spectra of Drain Current of Si-Implanted GaAs Metal-Semiconductor Field-Effect Transistors Having Large and Small Low-Frequency Oscillations

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